Factory Lead Time  

15 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

200W Tc

Turn Off Delay Time  

51 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2006

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

6.3MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

200W

Case Connection  

DRAIN

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.3m Ω @ 75A, 10V

Vgs(th) (Max) @ Id  

4V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds  

5150pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

180nC @ 10V

Rise Time  

120ns

Vgs (Max)  

±20V

Fall Time (Typ)  

63 ns

Continuous Drain Current (ID)  

120A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

75A

Drain to Source Breakdown Voltage  

75V

Avalanche Energy Rating (Eas)  

270 mJ

Height  

4.572mm

Length  

10.668mm

Width  

9.65mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free